The Post Chemical Mechanical Polishing Cleaner (SiC Cleaner After-CMP) features automatic heating, a constant temperature circulation device, an ultrasonic cleaning device, a spray fast-discharge bubbling overflow device, and a pipeline and electrical control system. Its functions are controlled by PLC and include adjustable cleaning time, a cleaning completion prompt, temperature control adjustment, high and low liquid level alarms, overflow protection, and a leakage detection alarm.
Product Parameters
1.Production Flow:
Load (Manual) → Ultrasonic Cleaning Agent Tank → QRD Tank → Ultrasonic Cleaning Agent Tank → QDR Tank → HF Tank → QDR Tank → Unload (Manual)
2.Major Materials:
Metal frame: SUS 304
Ice-Cream PP board
Tank material: PPN + SUS 316
3.Transportation:
Manual
Product Features and Applications
Removes residual slurry and larger particles from the surface of SiC wafers after the Chemical Mechanical Polishing procedure.
Product Details
◆ 1.Capacity:
6" × 1 cassette (25 pcs)
8" × 1 cassette (25 pcs)
◆ 2.Cleaning Batch Time:
≤1 batch/10 min (cleaning procedure time is adjustable).
Application Scenarios
◇ In October 2024, the SiC Cleaner After-CMP was commissioned and began operating at the customer site for Tiancheng Semiconductor.
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